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| SD403C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 430 A FEATURES * High power FAST recovery diode series * 1.0 to 1.5 s recovery time * High voltage ratings up to 1600 V * High current capability * Optimized turn-on and turn-off characteristics DO-200AA RoHS COMPLIANT * Low forward recovery * Fast and soft reverse recovery * Press PUK encapsulation * Case style conform to JEDEC DO-200AA * Maximum junction temperature 125 C PRODUCT SUMMARY IF(AV) 430 A * Lead (Pb)-free TYPICAL APPLICATIONS * Snubber diode for GTO * High voltage freewheeling diode * Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) TEST CONDITIONS VALUES 430 Ths 55 675 Ths 50 Hz 60 Hz 50 Hz 60 Hz Range 25 6180 6470 191 175 400 to 1600 1.0 to 1.5 TJ 25 - 40 to 125 UNITS A C A C A IF(RMS) IFSM I2 t VRRM trr TJ kA2s V s C Document Number: 93175 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 SD403C..C Series Vishay High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 SD403C..S10C 08 10 12 SD403C..S15C 14 16 VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 1000 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 1100 1300 1500 1700 35 IRRM MAXIMUM AT TJ = 125 C mA Fast Recovery Diodes (Hockey PUK Version), 430 A FORWARD CONDUCTION PARAMETER Maximum average forward current at heatsink temperature Maximum RMS current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle , non-repetitive forward current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level of forward slope resistance High level of forward slope resistance Maximum forward voltage drop I2t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 430 (210) 55 (75) 675 6180 6470 5200 Sinusoidal half wave, initial TJ = TJ maximum 5445 191 175 135 123 1910 1.00 1.20 0.56 0.70 1.83 kA2s V kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum Ipk = 1350 A, TJ = 25 C; tp = 10 ms sinusoidal wave m V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 C CODE trr AT 25 % IRRM (s) 1.0 1.5 TEST CONDITIONS Ipk SQUARE PULSE (A) 750 TYPICAL VALUES AT TJ = 125 C IFM dI/dt (A/s) Vr (V) trr AT 25 % IRRM (s) 2.4 2.9 Qrr (C) 52 90 Irr (A) dir dt trr t Qrr IRM(REC) S10 S15 25 - 30 33 44 www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93175 Revision: 04-Aug-08 SD403C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 430 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg DC operation single side cooled RthJ-hs DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 C - 40 to 150 0.16 K/W 0.08 4900 (500) 70 DO-200AA N (kg) g UNITS RthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE SINGLE SIDE 180 120 90 60 30 0.010 0.012 0.016 0.024 0.042 DOUBLE SIDE 0.011 0.013 0.016 0.024 0.042 SINGLE SIDE 0.008 0.013 0.018 0.025 0.042 DOUBLE SIDE 0.008 0.013 0.018 0.025 0.042 TJ = TJ maximum K/W RECTANGULAR CONDUCTION TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 93175 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 SD403C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 430 A 130 M a xim u m A llo w a b le H e a tsin k T e m p e ra tu r e ( C ) S D 4 0 3 C ..C S e rie s (S in g le Sid e C o o le d ) R thJ- hs (D C ) = 0 .1 6 K / W 120 110 100 90 80 70 60 90 50 40 0 100 2 00 30 0 4 00 5 00 600 7 00 A v e ra g e F o rw a r d C u rre n t (A ) 30 60 1 2 0 1 8 0 DC C o ndu c tio n Pe rio d 130 M a x im u m A llo w a b le He a t sin k T e m p e ra t ure (C ) 120 110 100 90 80 30 70 0 50 100 1 50 2 00 2 50 A v e ra g e F o rw a r d C u rre n t (A ) 60 90 1 20 1 80 C o nduc tio n An g le SD 4 0 3 C ..C Se rie s (D o u b le Sid e C o o le d ) R thJ-h s (D C ) = 0 .0 8 K / W Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 130 M a x im um A llo w a b le H e at sin k T e m p e ra tu re ( C ) Maxim um Average Forw ard Pow er Loss (W ) 120 110 100 C o ndu ctio n Pe rio d 800 S D 4 0 3 C ..C Se rie s (S in gle Sid e C o o le d ) R thJ-h s (D C ) = 0 .1 6 K /W 700 600 500 400 300 200 100 0 0 50 100 150 200 250 300 350 400 450 Average Forward Curren t (A) C o ndu c tio n Ang le 180 120 90 60 30 RM S Limit 90 80 70 60 50 0 50 100 150 20 0 2 50 30 0 35 0 A v e ra g e F o r w a rd C u rr e n t (A ) 30 60 9 0 1 2 0 180 DC SD403C..C Series TJ = 125C Fig. 2 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics Maxim um Allowable Heatsink Tempera ture (C ) 120 110 100 90 80 SD403C..C Series (Doub le Side Cooled) R th J-hs (DC) = 0.08 K/W M a x im um A v e ra g e Fo rw a rd Po w e r Lo ss (W ) 130 1 10 0 1 00 0 90 0 80 0 70 0 60 0 50 0 40 0 30 0 20 0 10 0 0 0 1 00 20 0 3 00 400 5 00 60 0 7 00 A v e ra g e F o rw a rd C u rre n t (A ) C o ndu ctio n Pe rio d DC 1 8 0 1 2 0 90 60 30 RM S Lim it C o nd uctio n A ng le 30 70 60 50 0 60 90 120 180 SD 4 0 3 C ..C S e r ie s TJ = 1 2 5 C 50 100 150 200 250 300 350 400 450 Average Forward Curren t (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - Forward Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93175 Revision: 04-Aug-08 SD403C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 430 A 6 00 0 P e a k H a lf Sin e W a v e F o rw a rd C u rre n t (A ) 5 50 0 5 00 0 4 50 0 4 00 0 3 50 0 3 00 0 2 50 0 2 00 0 1 10 1 00 Num be r O f Equ al A m plitud e Ha lf Cy c le C urre nt Pulse s (N ) T ra n sie n t T h e rm al Im pe d an c e Z thJ-hs ( K / W ) A t A n y R a t e d Lo a d C o n d it io n A n d W it h R a t e d V RR MA p p lie d Fo llo w in g S u rg e . In it ia l T J = 1 2 5 C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 1 SD 4 0 3 C ..C S e rie s 0 .1 S te a d y St a t e V a lu e 0. 01 R t hJ-hs = 0 .1 6 K /W ( S in g le Sid e C o o le d ) R thJ- hs = 0 .0 8 K /W ( D o ub le S id e C o o le d ) ( D C O p e ra t io n ) 0 .0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 10 0 S D 4 0 3 C ..C S e rie s S q u a re W a v e P u lse D u ra tio n ( s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 7000 Peak H alf Sine W ave Forwa rd Current (A) 6000 5000 4000 3000 2000 M a x im u m R e ve rse R e c o v e ry T im e - T rr ( s) Maxim um Non Rep etitive Surge Current Versus Pulse Train D uration . Initial T = 125C J No Voltage Reapplied Rated V RR MReapplied 2 .8 2 .6 2 .4 2 .2 40 0 A SD 4 0 3 C ..S1 0 C Se rie s TJ = 1 2 5 C ; V r = 3 0 V I FM = 7 50 A Squa re Pulse 2 1 .8 1 .6 10 100 20 0 A SD 403C..C Series 0 .1 Pulse Train Duration (s) 1 1000 0 .0 1 Rat e O f Fall O f Forw ard Current - d i/dt (A /s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 11 - Recovery Time Characteristics 1 0 0 00 M a xim um R e v e rse R e c o v e ry C h a rg e - Q rr ( C ) T J = 2 5 C Ins tan ta ne o u s Fo rw ard C urr e nt ( A ) 14 0 13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 20 10 0 20 40 60 80 100 SD 4 0 3 C ..S1 0 C Se rie s TJ = 1 2 5 C ; V r = 3 0 V 200 A 4 00 A I FM = 7 50 A Squa re Pulse T J = 1 2 5 C 1000 1 00 SD 4 0 3 C ..C Se r ie s 10 0 1 2 3 4 5 6 7 In st an ta n e o us Fo rw ar d V o lta ge ( V ) R ate O f Fa ll O f Fo rw ard C urre nt - di/dt (A /s) Fig. 9 - Forward Voltage Drop Characteristics Fig. 12 - Recovery Charge Characteristics Document Number: 93175 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 SD403C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 430 A 170 I FM = 750 A 90 M a xim u m R e v e rse R e c o v e ry C h a rg e - Q rr ( C ) Maxim um Rev erse Recov ery Cur ren t - Irr (A) 80 70 60 50 40 30 20 10 160 150 140 130 120 110 100 90 80 70 60 50 0 20 I FM = 75 0 A Sq uare Pulse Squa re Pu lse 4 00 A 20 0 A 40 0 A 20 0 A SD40 3C..S10C Series TJ = 12 5 C; V r = 30V 10 20 30 4 0 50 60 7 0 80 9 0 10 0 SD 4 0 3 C ..S1 5 C Se rie s TJ = 1 2 5 C ; V r = 3 0 V 40 60 80 10 0 Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /s) Rate O f Fall O f Fo rw ard C urre nt - d i/dt ( A/s) Fig. 13 - Recovery Current Characteristics Fig. 15 - Recovery Charge Characteristics 3 .5 M a x im u m R e v e rse R e c o v e ry T im e - T rr ( s) S D 4 0 3 C ..S1 5 C S e rie s TJ = 1 2 5 C ; V r = 3 0 V 3 I FM = 750 A Sq uare Pulse 130 M a x im um Re v e rse Re c o v e ry C u rre n t - Irr (A ) 120 110 100 90 80 70 60 50 40 30 20 10 1 0 20 3 0 40 5 0 60 70 80 9 0 10 0 SD 4 0 3 C ..S1 5 C S e rie s TJ = 1 2 5 C ; V r = 3 0 V 2 00 A 40 0 A I FM = 750 A Squ are Pu lse 2 .5 400 A 2 2 00 A 1 .5 10 10 0 Rate O f Fall O f Fo rw ard C urren t - di/d t (A/s) R ate O f Fa ll O f Forw ard C urre nt - di/dt ( A/s) Fig. 14 - Recovery Time Characteristics Fig. 16 - Recovery Current Characteristics 1E 4 20 jo u le s p e r p ulse 1 2 4 10 20 jo ule s p er pulse 1 0.2 0.1 0. 04 0.4 2 4 10 Pe a k Fo rw ard C u rre n t (A ) 0 .4 1E 3 0. 04 0 .02 0.2 0 .1 1E 2 0 .01 SD 4 0 3 C..S1 0C Se rie s T rape zo idal Pulse TJ = 1 2 5 C, V R R M = 8 0 0 V d v/ dt = 1 0 0 0 V/ s ; d i/ dt= 5 0 A / s tp SD 40 3 C ..S1 0 C S e ri es Si nu soi dal Pul se T J = 1 2 5C , V RRM = 8 0 0 V d v/ d t = 10 0 0V / s tp 1E 1 1E 1 1 E2 1E3 1E 4 1E1 1 E2 1E3 1E4 P u lse B a se w id t h ( s) P ulse B a se w id t h ( s) Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 93175 Revision: 04-Aug-08 SD403C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 430 A 1E4 2 0 jo ule s pe r pu lse 2 4 10 P e a k F o r w a rd C u rre n t (A ) 1 0.4 1 0 .4 0 .2 0 .1 2 4 10 2 0 jo ules pe r pulse 1E3 0. 1 0 .04 0.2 1E2 0 .02 SD 4 0 3. .S15 C Se ri es Si nu so idal Pu ls e T J = 1 2 5C , V R R M = 1 1 2 0 V dv / d t = 10 0 0 V/ s SD 4 0 3 C..S1 5C Se rie s Trape zo id al Puls e TJ = 1 2 5 C, V RR M = 11 20 V d v/ dt = 1 0 0 0 V/ s ; di / dt= 5 0 A/ s tp tp 1E1 1E1 1 E2 1 E3 1 E4 1 E1 1E2 1E3 1 E4 Pu lse Ba se w id t h ( s) P u lse Ba se w id t h ( s) Fig. 18 - Maximum Total Energy Per Pulse Characteristics ORDERING INFORMATION TABLE Device code SD 1 1 2 3 4 5 6 7 40 2 Diode 3 3 C 4 16 5 S15 6 C 7 Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code (see Recovery Characteristics table) C = PUK case DO-200AA LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95248 Document Number: 93175 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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